Strained MOSFETs on ordered SiGe dots

The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain...

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Detalles Bibliográficos
Autores principales: Cervenka, Johann, Kosina, Hans, Selberherr, Siegfried, Zhang, Jianjun, Hrauda, Nina, Stangl, Julian, Bauer, Guenther, Vastola, Guglielmo, Marzegalli, Anna, Montalenti, Francesco, Miglio, Leo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Pergamon Press 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3197885/
https://www.ncbi.nlm.nih.gov/pubmed/22180668
http://dx.doi.org/10.1016/j.sse.2011.06.041

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3197885/
https://www.ncbi.nlm.nih.gov/pubmed/22180668
http://dx.doi.org/10.1016/j.sse.2011.06.041

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