Spin effects in InAs self-assembled quantum dots

We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on app...

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Detalles Bibliográficos
Autores principales: dos Santos, Ednilson C, Gobato, Yara Galvão, Brasil, Maria JSP, Taylor, David A, Henini, Mohamed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211160/
https://www.ncbi.nlm.nih.gov/pubmed/21711647
http://dx.doi.org/10.1186/1556-276X-6-115

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211160/
https://www.ncbi.nlm.nih.gov/pubmed/21711647
http://dx.doi.org/10.1186/1556-276X-6-115

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