Spin effects in InAs self-assembled quantum dots

We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on app...

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Detalles Bibliográficos
Autores principales: dos Santos, Ednilson C, Gobato, Yara Galvão, Brasil, Maria JSP, Taylor, David A, Henini, Mohamed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211160/
https://www.ncbi.nlm.nih.gov/pubmed/21711647
http://dx.doi.org/10.1186/1556-276X-6-115
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author dos Santos, Ednilson C
Gobato, Yara Galvão
Brasil, Maria JSP
Taylor, David A
Henini, Mohamed
author_facet dos Santos, Ednilson C
Gobato, Yara Galvão
Brasil, Maria JSP
Taylor, David A
Henini, Mohamed
author_sort dos Santos, Ednilson C
collection PubMed
description We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.
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spelling pubmed-32111602011-11-09 Spin effects in InAs self-assembled quantum dots dos Santos, Ednilson C Gobato, Yara Galvão Brasil, Maria JSP Taylor, David A Henini, Mohamed Nanoscale Res Lett Nano Express We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW. Springer 2011-02-03 /pmc/articles/PMC3211160/ /pubmed/21711647 http://dx.doi.org/10.1186/1556-276X-6-115 Text en Copyright ©2011 dos Santos et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
dos Santos, Ednilson C
Gobato, Yara Galvão
Brasil, Maria JSP
Taylor, David A
Henini, Mohamed
Spin effects in InAs self-assembled quantum dots
title Spin effects in InAs self-assembled quantum dots
title_full Spin effects in InAs self-assembled quantum dots
title_fullStr Spin effects in InAs self-assembled quantum dots
title_full_unstemmed Spin effects in InAs self-assembled quantum dots
title_short Spin effects in InAs self-assembled quantum dots
title_sort spin effects in inas self-assembled quantum dots
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211160/
https://www.ncbi.nlm.nih.gov/pubmed/21711647
http://dx.doi.org/10.1186/1556-276X-6-115
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