Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most...

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Detalles Bibliográficos
Autores principales: Eriksson, Jens, Roccaforte, Fabrizio, Reshanov, Sergey, Leone, Stefano, Giannazzo, Filippo, LoNigro, Raffaella, Fiorenza, Patrick, Raineri, Vito
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211166/
https://www.ncbi.nlm.nih.gov/pubmed/21711619
http://dx.doi.org/10.1186/1556-276X-6-120

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211166/
https://www.ncbi.nlm.nih.gov/pubmed/21711619
http://dx.doi.org/10.1186/1556-276X-6-120

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