Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentratio...

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Detalles Bibliográficos
Autores principales: Wan, Zhenyu, Huang, Shujuan, Green, Martin A, Conibeer, Gavin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211175/
https://www.ncbi.nlm.nih.gov/pubmed/21711625
http://dx.doi.org/10.1186/1556-276X-6-129

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211175/
https://www.ncbi.nlm.nih.gov/pubmed/21711625
http://dx.doi.org/10.1186/1556-276X-6-129

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