Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer gra...

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Detalles Bibliográficos
Autores principales: Camara, Nicolas, Jouault, Benoit, Jabakhanji, Bilal, Caboni, Alessandra, Tiberj, Antoine, Consejo, Christophe, Godignon, Philipe, Camassel, Jean
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211189/
https://www.ncbi.nlm.nih.gov/pubmed/21711670
http://dx.doi.org/10.1186/1556-276X-6-141

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211189/
https://www.ncbi.nlm.nih.gov/pubmed/21711670
http://dx.doi.org/10.1186/1556-276X-6-141

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