Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic...

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Detalles Bibliográficos
Autores principales: Frazzetto, Alessia, Giannazzo, Filippo, Lo Nigro, Raffaella, Di Franco, Salvatore, Bongiorno, Corrado, Saggio, Mario, Zanetti, Edoardo, Raineri, Vito, Roccaforte, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211209/
https://www.ncbi.nlm.nih.gov/pubmed/21711667
http://dx.doi.org/10.1186/1556-276X-6-158

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211209/
https://www.ncbi.nlm.nih.gov/pubmed/21711667
http://dx.doi.org/10.1186/1556-276X-6-158

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