Atomic characterization of Si nanoclusters embedded in SiO(2 )by atom probe tomography

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composit...

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Detalles Bibliográficos
Autores principales: Roussel, Manuel, Talbot, Etienne, Gourbilleau, Fabrice, Pareige, Philippe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211216/
https://www.ncbi.nlm.nih.gov/pubmed/21711666
http://dx.doi.org/10.1186/1556-276X-6-164

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211216/
https://www.ncbi.nlm.nih.gov/pubmed/21711666
http://dx.doi.org/10.1186/1556-276X-6-164

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