Electrical behavior of MIS devices based on Si nanoclusters embedded in SiO(x)N(y )and SiO(2 )films

We examined and compared the electrical properties of silica (SiO(2)) and silicon oxynitride (SiO(x)N(y)) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering...

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Detalles Bibliográficos
Autores principales: Jacques, Emmanuel, Pichon, Laurent, Debieu, Olivier, Gourbilleau, Fabrice
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211223/
https://www.ncbi.nlm.nih.gov/pubmed/21711698
http://dx.doi.org/10.1186/1556-276X-6-170

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211223/
https://www.ncbi.nlm.nih.gov/pubmed/21711698
http://dx.doi.org/10.1186/1556-276X-6-170

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