Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

The electrical conductivity σ has been calculated for p-doped GaAs/Al(0.3)Ga(0.7)As and cubic GaN/Al(0.3)Ga(0.7)N thin superlattices (SLs). The calculations are done within a self-consistent approach to the [Formula: see text] theory by means of a full six-band Luttinger-Kohn Hamiltonian, together w...

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Detalles Bibliográficos
Autores principales: dos Santos, Osmar FP, Rodrigues, Sara CP, Sipahi, Guilherme M, Scolfaro, Luísa MR, da Silva Jr, Eronides F
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211228/
https://www.ncbi.nlm.nih.gov/pubmed/21711699
http://dx.doi.org/10.1186/1556-276X-6-175

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211228/
https://www.ncbi.nlm.nih.gov/pubmed/21711699
http://dx.doi.org/10.1186/1556-276X-6-175

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