Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application

Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO(2)/SiO(2 )stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge(+ )ion implantation energy. Two different energies...

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Detalles Bibliográficos
Autores principales: Sahu, Bhabani Shankar, Gloux, Florence, Slaoui, Abdelilah, Carrada, Marzia, Muller, Dominique, Groenen, Jesse, Bonafos, Caroline, Lhostis, Sandrine
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211230/
https://www.ncbi.nlm.nih.gov/pubmed/21711708
http://dx.doi.org/10.1186/1556-276X-6-177

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211230/
https://www.ncbi.nlm.nih.gov/pubmed/21711708
http://dx.doi.org/10.1186/1556-276X-6-177

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