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Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application
Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO(2)/SiO(2 )stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge(+ )ion implantation energy. Two different energies...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211230/ https://www.ncbi.nlm.nih.gov/pubmed/21711708 http://dx.doi.org/10.1186/1556-276X-6-177 |