Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN(x):H films

In this study, a wide range of a-SiN(x):H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH(3 )and SiH(4). The silicon-rich a-SiN(x):H films (SRSN) were sandwiched between a bottom the...

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Detalles Bibliográficos
Autores principales: Sahu, Bhabani Shankar, Delachat, Florian, Slaoui, Abdelilah, Carrada, Marzia, Ferblantier, Gerald, Muller, Dominique
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211231/
https://www.ncbi.nlm.nih.gov/pubmed/21711712
http://dx.doi.org/10.1186/1556-276X-6-178

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211231/
https://www.ncbi.nlm.nih.gov/pubmed/21711712
http://dx.doi.org/10.1186/1556-276X-6-178

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