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Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN(x):H films
In this study, a wide range of a-SiN(x):H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH(3 )and SiH(4). The silicon-rich a-SiN(x):H films (SRSN) were sandwiched between a bottom the...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211231/ https://www.ncbi.nlm.nih.gov/pubmed/21711712 http://dx.doi.org/10.1186/1556-276X-6-178 |