Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing...

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Detalles Bibliográficos
Autores principales: Mari, Riaz H, Shafi, Muhammad, Aziz, Mohsin, Khatab, Almontaser, Taylor, David, Henini, Mohamed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211234/
https://www.ncbi.nlm.nih.gov/pubmed/21711687
http://dx.doi.org/10.1186/1556-276X-6-180

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211234/
https://www.ncbi.nlm.nih.gov/pubmed/21711687
http://dx.doi.org/10.1186/1556-276X-6-180

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