Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is relea...

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Detalles Bibliográficos
Autores principales: Frigeri, Cesare, Serényi, Miklós, Khánh, Nguyen Quoc, Csik, Attila, Riesz, Ferenc, Erdélyi, Zoltán, Nasi, Lucia, Beke, Dezső László, Boyen, Hans-Gerd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211242/
https://www.ncbi.nlm.nih.gov/pubmed/21711697
http://dx.doi.org/10.1186/1556-276X-6-189

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211242/
https://www.ncbi.nlm.nih.gov/pubmed/21711697
http://dx.doi.org/10.1186/1556-276X-6-189

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