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Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers
Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is relea...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211242/ https://www.ncbi.nlm.nih.gov/pubmed/21711697 http://dx.doi.org/10.1186/1556-276X-6-189 |