Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Electron beam methods, such as cathodoluminescence (CL) that is based on an electron-probe microanalyser, and (200) dark field and high angle annular dark field (HAADF) in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaA...

Descripción completa

Detalles Bibliográficos
Autores principales: Frigeri, Cesare, Shakhmin, Alexey Aleksandrovich, Vinokurov, Dmitry Anatolievich, Zamoryanskaya, Maria Vladimirovna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211250/
https://www.ncbi.nlm.nih.gov/pubmed/21711707
http://dx.doi.org/10.1186/1556-276X-6-194

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211250/
https://www.ncbi.nlm.nih.gov/pubmed/21711707
http://dx.doi.org/10.1186/1556-276X-6-194

Ejemplares similares