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Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods
Electron beam methods, such as cathodoluminescence (CL) that is based on an electron-probe microanalyser, and (200) dark field and high angle annular dark field (HAADF) in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaA...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211250/ https://www.ncbi.nlm.nih.gov/pubmed/21711707 http://dx.doi.org/10.1186/1556-276X-6-194 |