Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth

In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning...

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Detalles Bibliográficos
Autores principales: Helfrich, Mathieu, Gröger, Roland, Förste, Alexander, Litvinov, Dimitri, Gerthsen, Dagmar, Schimmel, Thomas, Schaadt, Daniel M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211268/
https://www.ncbi.nlm.nih.gov/pubmed/21711729
http://dx.doi.org/10.1186/1556-276X-6-211

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211268/
https://www.ncbi.nlm.nih.gov/pubmed/21711729
http://dx.doi.org/10.1186/1556-276X-6-211

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