Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth

In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning...

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Detalles Bibliográficos
Autores principales: Helfrich, Mathieu, Gröger, Roland, Förste, Alexander, Litvinov, Dimitri, Gerthsen, Dagmar, Schimmel, Thomas, Schaadt, Daniel M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211268/
https://www.ncbi.nlm.nih.gov/pubmed/21711729
http://dx.doi.org/10.1186/1556-276X-6-211
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author Helfrich, Mathieu
Gröger, Roland
Förste, Alexander
Litvinov, Dimitri
Gerthsen, Dagmar
Schimmel, Thomas
Schaadt, Daniel M
author_facet Helfrich, Mathieu
Gröger, Roland
Förste, Alexander
Litvinov, Dimitri
Gerthsen, Dagmar
Schimmel, Thomas
Schaadt, Daniel M
author_sort Helfrich, Mathieu
collection PubMed
description In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.
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spelling pubmed-32112682011-11-09 Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth Helfrich, Mathieu Gröger, Roland Förste, Alexander Litvinov, Dimitri Gerthsen, Dagmar Schimmel, Thomas Schaadt, Daniel M Nanoscale Res Lett Nano Express In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination. Springer 2011-03-11 /pmc/articles/PMC3211268/ /pubmed/21711729 http://dx.doi.org/10.1186/1556-276X-6-211 Text en Copyright ©2011 Schaadt et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Helfrich, Mathieu
Gröger, Roland
Förste, Alexander
Litvinov, Dimitri
Gerthsen, Dagmar
Schimmel, Thomas
Schaadt, Daniel M
Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
title Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
title_full Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
title_fullStr Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
title_full_unstemmed Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
title_short Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
title_sort investigation of pre-structured gaas surfaces for subsequent site-selective inas quantum dot growth
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211268/
https://www.ncbi.nlm.nih.gov/pubmed/21711729
http://dx.doi.org/10.1186/1556-276X-6-211
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