Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 ×...

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Detalles Bibliográficos
Autores principales: Arapkina, Larisa V, Yuryev, Vladimir A, Chizh, Kirill V, Shevlyuga, Vladimir M, Storojevyh, Mikhail S, Krylova, Lyudmila A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211275/
https://www.ncbi.nlm.nih.gov/pubmed/21711733
http://dx.doi.org/10.1186/1556-276X-6-218

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211275/
https://www.ncbi.nlm.nih.gov/pubmed/21711733
http://dx.doi.org/10.1186/1556-276X-6-218

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