Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide

The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar den...

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Detalles Bibliográficos
Autores principales: Ahn, Jung-Joon, Jo, Yeong-Deuk, Kim, Sang-Cheol, Lee, Ji-Hoon, Koo, Sang-Mo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211294/
https://www.ncbi.nlm.nih.gov/pubmed/21711752
http://dx.doi.org/10.1186/1556-276X-6-235

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211294/
https://www.ncbi.nlm.nih.gov/pubmed/21711752
http://dx.doi.org/10.1186/1556-276X-6-235

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