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Gallium hydride vapor phase epitaxy of GaN nanowires
Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH(3 )and N(2):H(2), where the H(2 )content was varied between 10 and 100%. The growth of high-quality GaN NW...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer
2011
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211325/ https://www.ncbi.nlm.nih.gov/pubmed/21711801 http://dx.doi.org/10.1186/1556-276X-6-262 |