Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (T(gr )from 1600 to 2000°C). For all the considered growth temperatures, few layers of...

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Detalles Bibliográficos
Autores principales: Vecchio, Carmelo, Sonde, Sushant, Bongiorno, Corrado, Rambach, Martin, Yakimova, Rositza, Raineri, Vito, Giannazzo, Filippo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211332/
https://www.ncbi.nlm.nih.gov/pubmed/21711803
http://dx.doi.org/10.1186/1556-276X-6-269

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211332/
https://www.ncbi.nlm.nih.gov/pubmed/21711803
http://dx.doi.org/10.1186/1556-276X-6-269

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