Origins of 1/f noise in nanostructure inclusion polymorphous silicon films

In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, α(H), is independent of doping ratio. The 1/f noise power spectral density and noise...

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Detalles Bibliográficos
Autores principales: Li, Shibin, Jiang, Yadong, Wu, Zhiming, Wu, Jiang, Ying, Zhihua, Wang, Zhiming, Li, Wei, Salamo, Gregory
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211346/
https://www.ncbi.nlm.nih.gov/pubmed/21711802
http://dx.doi.org/10.1186/1556-276X-6-281

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211346/
https://www.ncbi.nlm.nih.gov/pubmed/21711802
http://dx.doi.org/10.1186/1556-276X-6-281

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