Cargando…
Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, α(H), is independent of doping ratio. The 1/f noise power spectral density and noise...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211346/ https://www.ncbi.nlm.nih.gov/pubmed/21711802 http://dx.doi.org/10.1186/1556-276X-6-281 |