Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure

We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In(0.15)Ga(0.85)As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealin...

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Detalles Bibliográficos
Autores principales: Zhou, Xiaolong, Chen, Yonghai, Xu, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211404/
https://www.ncbi.nlm.nih.gov/pubmed/21711820
http://dx.doi.org/10.1186/1556-276X-6-317

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211404/
https://www.ncbi.nlm.nih.gov/pubmed/21711820
http://dx.doi.org/10.1186/1556-276X-6-317

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