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Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In(0.15)Ga(0.85)As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealin...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211404/ https://www.ncbi.nlm.nih.gov/pubmed/21711820 http://dx.doi.org/10.1186/1556-276X-6-317 |