Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiN(x )layers deposited on a GaN template, which provided...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Guangyu, Zhao, Hongping, Zhang, Jing, Park, Joo Hyung, Mawst, Luke J, Tansu, Nelson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211431/
https://www.ncbi.nlm.nih.gov/pubmed/21711862
http://dx.doi.org/10.1186/1556-276X-6-342

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211431/
https://www.ncbi.nlm.nih.gov/pubmed/21711862
http://dx.doi.org/10.1186/1556-276X-6-342

Ejemplares similares