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Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiN(x )layers deposited on a GaN template, which provided...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211431/ https://www.ncbi.nlm.nih.gov/pubmed/21711862 http://dx.doi.org/10.1186/1556-276X-6-342 |