CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth

We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the coverage of 5.1 Å and found to have different structures. Atomic models of nuclei of both...

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Detalles Bibliográficos
Autores principales: Arapkina, Larisa V, Yuryev, Vladimir A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211434/
https://www.ncbi.nlm.nih.gov/pubmed/21711886
http://dx.doi.org/10.1186/1556-276X-6-345

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211434/
https://www.ncbi.nlm.nih.gov/pubmed/21711886
http://dx.doi.org/10.1186/1556-276X-6-345

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