Cargando…
CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth
We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the coverage of 5.1 Å and found to have different structures. Atomic models of nuclei of both...
Autores principales: | Arapkina, Larisa V, Yuryev, Vladimir A |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2011
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211434/ https://www.ncbi.nlm.nih.gov/pubmed/21711886 http://dx.doi.org/10.1186/1556-276X-6-345 |
Ejemplares similares
-
Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
por: Yuryev, Vladimir A, et al.
Publicado: (2011) -
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED
por: Arapkina, Larisa V, et al.
Publicado: (2011) -
Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
por: Yuryev, Vladimir A, et al.
Publicado: (2012) -
Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C
por: Storozhevykh, Mikhail S., et al.
Publicado: (2015) -
MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
por: E, Yanxiong, et al.
Publicado: (2015)