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Scaling properties of ballistic nano-transistors
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated I(D )- V(D)-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution,...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211455/ https://www.ncbi.nlm.nih.gov/pubmed/21711899 http://dx.doi.org/10.1186/1556-276X-6-365 |