Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination

Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observa...

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Detalles Bibliográficos
Autores principales: Peres, Marco, Magalhães, Sérgio, Fellmann, Vincent, Daudin, Bruno, Neves, Armando José, Alves, Eduardo, Lorenz, Katharina, Monteiro, Teresa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211471/
https://www.ncbi.nlm.nih.gov/pubmed/21711897
http://dx.doi.org/10.1186/1556-276X-6-378

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211471/
https://www.ncbi.nlm.nih.gov/pubmed/21711897
http://dx.doi.org/10.1186/1556-276X-6-378

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