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Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observa...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211471/ https://www.ncbi.nlm.nih.gov/pubmed/21711897 http://dx.doi.org/10.1186/1556-276X-6-378 |