Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

We investigated the ground-state (GS) modulation characteristics of 1.3 μm InAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. The choice of annealing conditions was determined from our recently reported results. With reference to the as-grown QD lasers, one obtains ap...

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Detalles Bibliográficos
Autores principales: Zhao, Hanxue, Yoon, Soon Fatt, Ngo, Chun Yong, Wang, Rui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211475/
https://www.ncbi.nlm.nih.gov/pubmed/21711913
http://dx.doi.org/10.1186/1556-276X-6-382

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211475/
https://www.ncbi.nlm.nih.gov/pubmed/21711913
http://dx.doi.org/10.1186/1556-276X-6-382

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