Fabrication of HfO(2 )patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Nanostructuring of ultrathin HfO(2 )films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO(2 )film was carried out by reactive ion beam etching using CF(4 )and O(2 )plasmas. A combination of atomic...

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Detalles Bibliográficos
Autores principales: Benedicto, Marcos, Galiana, Beatriz, Molina-Aldareguia, Jon M, Monaghan, Scott, Hurley, Paul K, Cherkaoui, Karim, Vazquez, Luis, Tejedor, Paloma
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211495/
https://www.ncbi.nlm.nih.gov/pubmed/21711946
http://dx.doi.org/10.1186/1556-276X-6-400

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211495/
https://www.ncbi.nlm.nih.gov/pubmed/21711946
http://dx.doi.org/10.1186/1556-276X-6-400

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