Polystyrene negative resist for high-resolution electron beam lithography

We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which...

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Detalles Bibliográficos
Autores principales: Ma, Siqi, Con, Celal, Yavuz, Mustafa, Cui, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211865/
https://www.ncbi.nlm.nih.gov/pubmed/21749679
http://dx.doi.org/10.1186/1556-276X-6-446

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211865/
https://www.ncbi.nlm.nih.gov/pubmed/21749679
http://dx.doi.org/10.1186/1556-276X-6-446

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