Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr(0.3), Ti(0.7))O(3 )(PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by u...

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Detalles Bibliográficos
Autores principales: Shen, Zhenkui, Chen, Zhihui, Lu, Qian, Qiu, Zhijun, Jiang, Anquan, Qu, Xinping, Chen, Yifang, Liu, Ran
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211987/
https://www.ncbi.nlm.nih.gov/pubmed/21794156
http://dx.doi.org/10.1186/1556-276X-6-474

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211987/
https://www.ncbi.nlm.nih.gov/pubmed/21794156
http://dx.doi.org/10.1186/1556-276X-6-474

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