Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr(0.3), Ti(0.7))O(3 )(PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by u...

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Detalles Bibliográficos
Autores principales: Shen, Zhenkui, Chen, Zhihui, Lu, Qian, Qiu, Zhijun, Jiang, Anquan, Qu, Xinping, Chen, Yifang, Liu, Ran
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211987/
https://www.ncbi.nlm.nih.gov/pubmed/21794156
http://dx.doi.org/10.1186/1556-276X-6-474
Descripción
Sumario:In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr(0.3), Ti(0.7))O(3 )(PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

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