Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr(0.3), Ti(0.7))O(3 )(PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by u...

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Detalles Bibliográficos
Autores principales: Shen, Zhenkui, Chen, Zhihui, Lu, Qian, Qiu, Zhijun, Jiang, Anquan, Qu, Xinping, Chen, Yifang, Liu, Ran
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211987/
https://www.ncbi.nlm.nih.gov/pubmed/21794156
http://dx.doi.org/10.1186/1556-276X-6-474
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author Shen, Zhenkui
Chen, Zhihui
Lu, Qian
Qiu, Zhijun
Jiang, Anquan
Qu, Xinping
Chen, Yifang
Liu, Ran
author_facet Shen, Zhenkui
Chen, Zhihui
Lu, Qian
Qiu, Zhijun
Jiang, Anquan
Qu, Xinping
Chen, Yifang
Liu, Ran
author_sort Shen, Zhenkui
collection PubMed
description In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr(0.3), Ti(0.7))O(3 )(PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.
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spelling pubmed-32119872011-11-09 Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application Shen, Zhenkui Chen, Zhihui Lu, Qian Qiu, Zhijun Jiang, Anquan Qu, Xinping Chen, Yifang Liu, Ran Nanoscale Res Lett Nano Express In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr(0.3), Ti(0.7))O(3 )(PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data. Springer 2011-07-27 /pmc/articles/PMC3211987/ /pubmed/21794156 http://dx.doi.org/10.1186/1556-276X-6-474 Text en Copyright ©2011 Shen et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Shen, Zhenkui
Chen, Zhihui
Lu, Qian
Qiu, Zhijun
Jiang, Anquan
Qu, Xinping
Chen, Yifang
Liu, Ran
Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application
title Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application
title_full Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application
title_fullStr Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application
title_full_unstemmed Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application
title_short Nano-embossing technology on ferroelectric thin film Pb(Zr(0.3),Ti(0.7))O(3 )for multi-bit storage application
title_sort nano-embossing technology on ferroelectric thin film pb(zr(0.3),ti(0.7))o(3 )for multi-bit storage application
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211987/
https://www.ncbi.nlm.nih.gov/pubmed/21794156
http://dx.doi.org/10.1186/1556-276X-6-474
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