Atom devices based on single dopants in silicon nanostructures

Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent...

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Detalles Bibliográficos
Autores principales: Moraru, Daniel, Udhiarto, Arief, Anwar, Miftahul, Nowak, Roland, Jablonski, Ryszard, Hamid, Earfan, Tarido, Juli Cha, Mizuno, Takeshi, Tabe, Michiharu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211992/
https://www.ncbi.nlm.nih.gov/pubmed/21801408
http://dx.doi.org/10.1186/1556-276X-6-479

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211992/
https://www.ncbi.nlm.nih.gov/pubmed/21801408
http://dx.doi.org/10.1186/1556-276X-6-479

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