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Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
The band alignment of ZrO(2)/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N(2)O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO(2)/Si was found to be 4.75 eV, w...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212003/ https://www.ncbi.nlm.nih.gov/pubmed/21831264 http://dx.doi.org/10.1186/1556-276X-6-489 |