Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

The band alignment of ZrO(2)/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N(2)O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO(2)/Si was found to be 4.75 eV, w...

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Detalles Bibliográficos
Autores principales: Wong, Yew Hoong, Cheong, Kuan Yew
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212003/
https://www.ncbi.nlm.nih.gov/pubmed/21831264
http://dx.doi.org/10.1186/1556-276X-6-489
Descripción
Sumario:The band alignment of ZrO(2)/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N(2)O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO(2)/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO(2)/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10(-6 )A/cm(2).

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