Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

The band alignment of ZrO(2)/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N(2)O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO(2)/Si was found to be 4.75 eV, w...

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Detalles Bibliográficos
Autores principales: Wong, Yew Hoong, Cheong, Kuan Yew
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212003/
https://www.ncbi.nlm.nih.gov/pubmed/21831264
http://dx.doi.org/10.1186/1556-276X-6-489
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author Wong, Yew Hoong
Cheong, Kuan Yew
author_facet Wong, Yew Hoong
Cheong, Kuan Yew
author_sort Wong, Yew Hoong
collection PubMed
description The band alignment of ZrO(2)/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N(2)O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO(2)/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO(2)/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10(-6 )A/cm(2).
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spelling pubmed-32120032011-11-09 Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si Wong, Yew Hoong Cheong, Kuan Yew Nanoscale Res Lett Nano Express The band alignment of ZrO(2)/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N(2)O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO(2)/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO(2)/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10(-6 )A/cm(2). Springer 2011-08-10 /pmc/articles/PMC3212003/ /pubmed/21831264 http://dx.doi.org/10.1186/1556-276X-6-489 Text en Copyright ©2011 Wong and Cheong; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Wong, Yew Hoong
Cheong, Kuan Yew
Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
title Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
title_full Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
title_fullStr Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
title_full_unstemmed Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
title_short Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
title_sort band alignment and enhanced breakdown field of simultaneously oxidized and nitrided zr film on si
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212003/
https://www.ncbi.nlm.nih.gov/pubmed/21831264
http://dx.doi.org/10.1186/1556-276X-6-489
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