III-Nitride grating grown on freestanding HfO(2 )gratings

We report here the epitaxial growth of III-nitride material on freestanding HfO(2 )gratings by molecular beam epitaxy. Freestanding HfO(2 )gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO(2 )film by a front-side silicon process. T...

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Detalles Bibliográficos
Autores principales: Wang, Yongjin, Wu, Tong, Hu, Fangren, Kanamori, Yoshiaki, Zhu, Hongbo, Hane, Kazuhiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212012/
https://www.ncbi.nlm.nih.gov/pubmed/21849084
http://dx.doi.org/10.1186/1556-276X-6-497

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212012/
https://www.ncbi.nlm.nih.gov/pubmed/21849084
http://dx.doi.org/10.1186/1556-276X-6-497

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