Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution sca...

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Detalles Bibliográficos
Autores principales: Yuryev, Vladimir A, Arapkina, Larisa V
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212061/
https://www.ncbi.nlm.nih.gov/pubmed/21892938
http://dx.doi.org/10.1186/1556-276X-6-522

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212061/
https://www.ncbi.nlm.nih.gov/pubmed/21892938
http://dx.doi.org/10.1186/1556-276X-6-522

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