Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide...

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Detalles Bibliográficos
Autores principales: Polley, Craig M, Clarke, Warrick R, Simmons, Michelle Y
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212076/
https://www.ncbi.nlm.nih.gov/pubmed/21968083
http://dx.doi.org/10.1186/1556-276X-6-538

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212076/
https://www.ncbi.nlm.nih.gov/pubmed/21968083
http://dx.doi.org/10.1186/1556-276X-6-538

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