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Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements
We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212076/ https://www.ncbi.nlm.nih.gov/pubmed/21968083 http://dx.doi.org/10.1186/1556-276X-6-538 |